Introduction

• InP-based epi-wafers

  InGaAs APD

  

  APD (Avalanche Photo Diode) is crucible to low-level light detection due to its high gain, high sensitivity and high detectivity. The major market for APDs is optical communication and LIDAR (Light Detection and Ranging). Thanks to the accurate control of thickness and doping concentration, MBE technique has become the preferred growth method for APDs in high frequency applications, which requires exceptional accuracy and control of the doping and diffusion depth.

• InP-based epi-wafers

  InP HBT

  

  Due to the excellent gain, band-width and linearity, HBT (Heterojunction Bipolar Transistor) based on InP is particularly attractive for high frequency power amplifier device/circuits, which can be used for high-speed fiber-optic telecom such as 40G and 100G.

• GaAs-based epi-wafers

  GaAs pHEMT

  

  GaAs pHEMT (pseudo-morpic High Electron Mobility Transistor) is the widest choice for high-speed RF electronic application due to the low noise and extremely switching speed. RF switch applications become the major market for pHEMT. Circuits based on the pHEMT is used in high-speed communications such as fiber-optic communications, wireless local area net, point-to-point microwave communications, digital TV applications. In addition, due to the high speed and relatively high breakdown voltage, GaAs pHEMT can be used as millimeter wave high power amplifier.

Application

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  COMMUNICATION

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  IOT

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  SMART MEDICAL

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  ADAS